Us20050199931a1 Units And Strategies For Detecting Current Leakage Between Deep Trench Capacitors In Dram Units


At least two second electrodes are additionally supplied, every of which is disposed at a first aspect portion of one of many elongated trenches such that each trench accommodates a second electrode. Each of the second electrodes has a second floor portion disposed adjoining the primary floor portion of a respective one of the first electrodes for receiving injected electrons therefrom, and every has a 3rd floor portion. At least two third electrodes are further offered, and each of the third electrodes is disposed on the second facet portion of one of many elongated trenches such that every trench contains a third electrode. Each of the third electrodes additionally has a second floor portion disposed adjoining the first surface portion of a respective one of the first electrodes for receiving injected electrons therefrom. In addition, each third electrode includes a third surface portion. At least two fourth electrodes are also supplied.

Apply photoresist layer 332 then, 260 restrict N+ source areas 302 and kind the adverse electrode of diode in polysilicon diode districts 280 in the active array district.Photoresist floor 332 is also stuffed in the hole within the nitride layer 274 in grid bus district 270 and the tip region 290.Total to the unfavorable electrode that includes grid bus, polysilicon subject plate 291,299 and a plurality of diodes is injected arsenic, proven in accompanying drawing 24N.Remove photoresist layer 332 then.Canonical course of parameter in the step shown within the accompanying drawing 24L-24N has been proven in desk 7. The memory cell array of claim 13 or 14, wherein mentioned reminiscence cell comprises an EEPROM cell and said first electrodes comprise recall gates, said second electrodes and mentioned third electrodes comprise floating gates and said fourth electrodes comprise program gates. The direct-write EEPROM reminiscence array of declare 10, wherein said vertically disposed program gate and recall gate in every of mentioned plurality of trenches are separated from the corresponding floating gate pairs by a cloth which allows Fowler-Nordehim electron tunneling, mentioned materials comprising a silicon rich dielectric. Relatively low operational electric fields are also potential because of local field enhancement ensuing from use of the silicon wealthy dielectric injectors. In addition, high write performance is feasible due to the mixture of excessive local fields and low common most fields. Further, the vertical channel has two separate control voltage areas, (i.e., and . When voltage control is set high sufficient the recall gate voltage includes an inhibit voltage and prevents the turn on of the vertical channel region. On “chosen” bitlines, the frequent N+ diffusions and the N+ buried plate in the substrate are placed on the similar voltage.

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Thereafter, an implantation is carried out using the spacers 34 as masks to kind bit traces 14 in the substrate beneath the donut-type pillars 10 b. Determining whether or not there might be current leakage between the first and second deep trench capacitors of the take a look at gadget based on whether the first and second bit strains are electrically coupled to one another, wherein the current leakage between first and second bit lines of the check system signifies that present leakage is present between the deep trench capacitors within the reminiscence area. The method for fabricating a memory cell array according to declare 8 whereby the epitaxial layer is shaped by selective epitaxial silicon progress process. 10, after the ditch fill process, the pad nitride layer 14 and an upper portion of the spacer 24 are stripped off by methods recognized within the artwork, to thereby type a plurality of recessed implant home windows fifty four immediately above the isolated top silicon islands 10 a.

As shown, bit line contacts 22 are related in collection by bit traces BL1, BL2 or BL3, and the adjacent deep trench capacitors 10A and 10B, disposed in parallel, may be regarded as a trench capacitor pair 11. Current technology can only detect leakage present between different trench capacitor pairs. For example, current leakage between the capacitor 10B of the trench capacitor pair 11-1 and the capacitor 10A of the ditch capacitor pair 11-5, between the capacitor 10A of the ditch jimmy jewelry capacitor pair 11-1 and the capacitor 10B of the trench capacitor pair 11-3, or between the capacitor 10B of the trench capacitor pair 11-1 and the capacitor 10A of the trench capacitor pair 11-4, may be detected by an APDM construction. The methodology for fabricating a reminiscence cell array in accordance with declare 5 wherein a depth of each of the second line-shaped trenches is about 200 nm under primary surface of the semiconductor substrate.